Senior Epitaxy Engineer
Department: R&D
Employment Type: Full Time
Location: Plymouth
Description
An exciting opportunity to contribute to the epitaxial growth and process development of III–V arsenide and phosphide materials (e.g., GaAs, InP, GaAsP, InGaAsP). This role will be involved in the growth recipe development, material quality, and process stability, and works closely with device and manufacturing teams to support advanced semiconductor products. This role offers the opportunity to work in a small, highly skilled team, driving the development of state‑of‑the‑art technology platforms. You will directly contribute to the technology development.
Key Responsibilities
- Growth of III–V As/P materials using MOCVD.
- Develop, optimise, and maintain growth recipes for thickness, composition, doping, and uniformity.
- Design and grow complex heterostructures (e.g., quantum wells, superlattices).
- Troubleshoot growth‑related issues including defects, surface morphology, and repeatability.
- Actively identify and implement opportunities for innovation and continuous improvement.
- Consistently deliver high‑quality results while balancing development and production demands.
Skills, Knowledge and Expertise
- MS or PhD in Materials Science, Electrical Engineering, Physics, or related field.
- Strong hands‑on experience with III–V As/P epitaxial growth.
- Expertise in GaAs-, InP-, GaAsP-, and InGaAsP-based materials.
- Experience with MOCVD.
- Hands‑on experience with Aixtron or Veeco tools.
Advantage
- Experience within Photonics applications and/or MicroLED.
Benefits
- Pension scheme
- Private medical & dental insurance
- 28 days’ holiday + bank holidays
- Free onsite meals
- Onsite gym
- Relocation support
- Visa support available
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